Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits

摘要

In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/1-poly Gate 0.14μm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60 × 180 nm~2 achieves a large change in resistance of 3.52 kΩ (anti-parallel) with TMR ratio of 151 at room temperature, which is large enough for sensing scheme of standard CMOS logic. Furthermore, the write current is 320 μA that can be driven by a standard MOS transistor. As the results, it is shown that the DC performance of our fabricated MTJ integrated in CMOS circuits is very good for our novel spin logic (MTJ-based logic) device.