Analysis of ALD-processed thin films by ion-beam techniques

摘要

This review introduces the possibilities of ionbeam techniques for the analysis of thin films and thin film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOFERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).