机译:Trapping of hydrogen to lattice defects in nickel
Sandia National Laboratories, Livermore, CA 94551-0969, USA;
Center for Materials Simulation, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA;
Seagate Technology, 8001 E Bloomington Freeway, Bloomington, MN 55420, USA;