Fabrication of GaAs/AlGaAs quantum wires and quantum network structures using MBE selective growth

摘要

Feasibility of formation of GaAs/AlGaAs hexagonal nanowire networks by selective MBE growth on patterned (001) substrates is investigated. First, the process for forming -oriented straight QWR arrays is studied and optimized with respect to wire shape, size and uniformity. SBM and PL studies showed that arrow-head shaped GaAs nanowires can be formed on the top of (113) AlGaAs ridge with excellent size controllability and high uniformity. Feasibility study of hexagonal nanowire network formation by combining different pattern orientations has shown combination of and -directions is most promising.