Interfacial structure and its effect on nucleation and growth energetics in mesotaxial Si/CoSi2/Si structures

摘要

We show how analysis of the stacking sequences at CoSi2/Si interfaces formed by 100 kV Co+implantation into Sithinsp;(001) or (111) predicts the formation of partial dislocations or stacking faults at precipitate corners. The presence and nature of the stacking fault can uniquely identify the bonding coordination at the CoSi2/Si(111) interface. Consideration of the interfacial structure for twinned (B) and untwinned (A) lcub;111rcub; interfaces helps explain the competitive nucleation and growth ofAvsBprecipitates.