InGaAs/AlGaAs ridge waveguide lasers utilizing an InGaP etch-stop layer

摘要

An InGaP etch-stop layer was used to control the mesa height in a ridge waveguide InGaAs/AlGaAs strained multiple quantum well laser grown by organometallic vapour phase epitaxy. These 950 nm lasers exhibited internal quantum efficiencies of etai=0.99 and very low internal losses of alphai=2.6 cm-1. For a cavity length of 500 mu m, a threshold current of 12 mA was obtained. The high performance of these lasers and the improved uniformity of their characteristics demonstrate the utility of InGaP etch-stop layers in improving process yield without detrimental effects.