Effect of light on theDXcenters in Sihyphen; and Tehyphen;doped GaAlAs

摘要

Deep level transient spectroscopy (DLTS) and constant temperature capacitance transient measurements have been performed on theDXcenters under light illumination in GaAlAs alloys doped with Si and Te. Assuming that the effect of light is to ionize theDXcenters, experimental DLTS spectra have been simulated numerically. The stimulated spectra reproduces qualitatively the spectra in Tehyphen;doped samples only. In Sihyphen;doped samples, the stimulated spectra cannot reproduce the lighthyphen;induced peak reported recently by Jiaetal. lsqb;J. Appl. Phys.66, 5632 (1989)rsqb;. Our results confirm that this peak may be associated with a lighthyphen;induced metastable center related to Si in GaAlAs.