ECP Technology Faces Chemical, Dielectric Hurdles

摘要

ECP technology has progressed, but now issues dealing with integration, extendibility, porous films and CMP must be addressed before the 0.10 μm node is reached. Since IBM and its partners introduced it in 1997, ECP (electrochemical plating) has become an enabling technology for copper applications. Then, it was uncertain whether a void-free, high-aspect-ratio feature fill was possible. Companies like Applied, Novellus, Semitool and Shipley developed different chemistries, and now gap filling is yesterday's problem.