Ba(Zr{sub}0.2,Ti{sub}0.8)O{sub}3 thin films deposited by RF-magnetron sputtering for high dielectric constant material applications

摘要

This paper investigated the structural and electrical properties of the Ba(Zr{sub}xTi{sub}(1-x))O{sub}3 (BZT) thin films with a mole fraction of x = 0.2 for the applications of high dielectric constant material. BZT films with a thickness of 150nm were prepared on Pt/TiO{sub}2/SiO{sub}2/Si substrate as a function of substrate temperature. As the substrate temperature increases, we observed multi-crystalline BZT films with (111) and (200) planes, also crystallinity of the films and dielectric constants improved. BZT film deposited at 400℃ demonstrated the following parameters; the dielectric constant and dissipation factor are 95 and 0.021 respectively at 1 MHz, the leakage current is 8.79×10{sup}(-7) A/cm{sup}2. This paper reports the various material properties of BZT films prepared by RF magnetron sputtering system with different conditions and probes feasibility of BZT films in high permittivity material applications.