Piezoelectricity produced by poling in tetravalent metal doped silica glass

摘要

This paper presents piezoelectricity in germanium-doped silica (germanosilicate) films produced by poling treatment. The germanosilicate films were prepared on Si substrates by RF magnetron sputtering. The films were poled by electric fields of 2～4×10{sup}7 V/m at a temperature above 300℃. Before the poling, no piezoelectric response was observed. After the poling, a piezoelectric response caused by normal stress T{sub}33 on the film surface appeared. The maximum value of the piezoelectric constant d{sub}33 of the poled film was more than twice of d{sub}11 of quartz . Various applications of the piezoelectric Ge:SiO{sub}2 film are expected to emerge.