Boundhyphen;free intraband absorption in GaAshyphen;AlxGa1minus;xAs semiconductor quantum wells

摘要

The spectral characteristics of intraband absorption on boundhyphen;free transitions in semiconductor quantum wells are analyzed. Numerical results indicate that both comparatively narrowband (sim;30 meV) and broadband (gsim;200 meV) absorption may occur, which may be important in infrared detector design.