Role of dangling bonds and antisite defects in rapid and gradual IIIhyphen;V laser degradation

摘要

Based on calculations of deep trap energies, it is proposed that the rapid (sim;1 h) degradation of highhyphen;radiance (gsim;1018carriers/cm3) Gahyphen;rich IIIhyphen;V semiconductor lasers proceeds through selfhyphen;reproducing dangling bond deep traps generated as a result of nonradiative recombination. This degradation mechanism can be inhibited by constructing lasers from alloys whose dangling bond energy levels do not lie within the fundamental band gap. The gradual (sim;106h) IIIhyphen;V laser degradation is tentatively associated with recombination events at an anionhyphen;onhyphen;cationhyphen;site deep trap.