Erratum: Lowhyphen;temperature epitaxial growth of silicon by lowhyphen;pressure chemical vapor deposition lsqb;Appl. Phys. Lett.52, 1053 (1988)rsqb;

摘要

Lowhyphen;pressure chemical deposition of silicon by the pyrolysis of pure silane at relatively low temperatures and pressures below 100 mTorr can lead to structurally wellhyphen;defined films. Below 10 mTorr the films exhibit evidence of local epitaxial growth, which can be particularly well defined on Si(100) wafers chemically treated prior to deposition outside the deposition chamber. Even so, the interface was found to be highly strained, and highhyphen;resolution electron microscopy observations were used to analyze the defect structures in the epitaxial layer as initiated at the interface.