Novel photovoltaic dgr;hyphen;doped GaAs superlattice structure

摘要

An asymmetric dgr;hyphen;doped GaAs structure is described which exhibits novel photovoltaic effects and lowhyphen;intensity nonlinear optics. Of particular interest in this kind of structure is the ability to design the electrohyphen;optical and nonlinear optical properties and the material response time over a wide range by appropriate design of the doping profile.