Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

摘要

Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2×1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.