Prospects and key issues for compound semiconductor quantum devices

摘要

Prospects and key issues for the HI-V compound semiconductor quantum devices are discussed, introducing the results recently obtained at RCIQE. Availability of highly controllable epitaxial growth techniques, superb heterointerfaces, varieties of material selections, superb electron transport and large quantum effects, makes such devices extremely attractive. In this paper, issues related to quantum nanostructure formation, quantum devices, materials and processing technologies and circuit and system architecture are discussed.