Hydrogen sulfide plasma passivation of gallium arsenide

摘要

Improvement in the electrical properties of the GaAs surface has been accomplished using a roomhyphen;temperature hydrogen sulfide plasma. The surface has then been protected by a 300thinsp;deg;C plasma enhanced chemical vapor deposition (PECVD) SiO2film. This treatment is highly reproducible due to computer control of process parameters and longhyphen;lasting due to the SiO2cap. ImprovedChyphen;Vcharacteristics were observed, showing interface trap densities in the high 1011cmminus;2eVminus;1range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples.