Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se_2 Films

摘要

Polycrystalline Cu(In,Ga)Se_2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH_3)_2), which is a less hazardous Se source than H_2Se gas. CIGS films were fabricated at various Se(CH_3)_2 supply rates. We investigated the effect of the Se(CH_3)_2 supply rate on the crystal phase and surface morphology of the films.