Sihyphen;onhyphen;insulator films of high crystal perfection by zone melting under a SiO2cap provided with vent openings

摘要

We observe a marked improvement in the crystal perfection of zone melted thick Sihyphen;onhyphen;insulator films that were prepared for melt processing by etching an array of openings in the SiO2capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO2in the molten Si before recrystallization.