Variations in the magnitude and sign of the strain in epitaxial InP directly on (001) Si are studied as a function of layer thickness using photoluminescence and xhyphen;ray diffraction techniques. The heteroepilayers were grown by lowhyphen;pressure metalorganic chemical vapor deposition and showed good quality. We find that biaxial compressive strains are still present in InP layers with thickness up to 0.8 mgr;m. The magnitudes of compressive strains are much larger than those expected from the equilibrium theory. With increasing thickness above 1 mgr;m, the InP/Si layers suffer biaxial tensile strains as a result of differential thermal contraction during the cooling process after growth.
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