Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4hyphen;NH3hyphen;NF3mixtures

摘要

Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4hyphen;NH3hyphen;NF3gas mixtures. The deposition rate with NF3increases to a maximum of approximately six times that of SiNxHydeposited using only SiH4and NH3. Optical and electrical properties of the SiNxHyfilms are also affected. The addition of NF3to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHyfilms deposited using SiH4and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at.thinsp;percnt; F is present in the ashyphen;deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2occurs when the F content exceeds 10 at.thinsp;percnt;.