Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit

摘要

An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.