Leakage mechanism for tungsten/chromium metallized siliconp/njunctions

摘要

The thermal stability of tungsten/chromium metallized siliconp/njunctions has been studied using several analytical techniques. A direct correlation has thus been established between junction leakage and structure. The main cause of leakage current observed after annealing at above 400thinsp;deg;C was found to be the generation of filmhyphen;edgehyphen;induced dislocations associated with chromium disilicide formation.