Lowhyphen;temperature photoluminescence has been used as a minorityhyphen;carrier probe to investigate the perfection of laserhyphen;annealed Si. For cw laser annealing of ion implantation damage, the range of laser power over which good quality annealed material can be achieved, as determined by the relative luminescence efficiency, is limited. At high laser power, when laserhyphen;induced damage has been observed by other techniques, a slight broadening and shifting of the boundhyphen;exciton luminescence lines was seen. From these data, the residual strain surrounding the implanted ions was found to be small for the low doses employed in this study, with lattice displacements of less than sim;0.01percnt;. These results imply that laser annealing can give rise to highhyphen;quality material suitable for device application if sufficient care is exercised.
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