Nonalloyed ohmic contacts to electronhyphen;beamhyphen;annealed Sehyphen;ionhyphen;implanted GaAs

摘要

High donor concentrations (n=4times;1019cmminus;3) have been obtained by pulsed electron beam annealing of Sehyphen;ionhyphen;implanted GaAs. Nonalloyed ohmic contacts withrcles;6times;10minus;6OHgr;thinsp;cm2were formed on these samples with no surface etching. Postanneal heating above 250thinsp;deg;C results in a twohyphen;stage loss of carriers.