We investigate the correlation between electrons and holes in InAs/GaSb heterostructures and InAs/AlSb/GaSb heterostructures, in which the electron-hole distance is controlled by the inserted AlSb barrier thickness. The characteristics of the electron-hole correlating system are clearly observed in the transport properties. The Hall measurement, the resistance measurement applying the parallel magnetic field and the cyclotron resonance measurement show the transition between the correlating system and the independent system. In addition, using the back-gated samples, the electron and hole situation in the coexisting system is investigated. The quantum-Hall-effect in the correlating system is due to the excess electrons, suggesting the excitonic coupling of electrons and holes in the quantum-Hall region of the electrons.
展开▼
