Direct observation of interfacial point defects generated by channel hot hole injection innhyphen;channel metal oxide silicon field effect transistors

摘要

Using a modified electron spin resonance technique known as spinhyphen;dependent recombination, we have found that channel hot hole injection innchannel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as thePbocenter. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.