Quantum leap in laser emission

摘要

The University of Texas has successfully demonstrated the use of an InGaAs/GaAs quantum dot (QD) active region in a 1.3 micro;m GaAs-based laser. Due to the novel active region, the QD lasers exhibit extremely low threshold current density at record levels of 11 A/cm2 (80°K). Further, room-temperature operation at 1.31 micro;m has been demonstrated with a threshold current density of 90 A/cm2.