InGaAs/AlGaAs strained quantum well laser with semihyphen;insulating low temperature GaAs and lateralnhyphen;phyphen;ncurrent confinement structures grown by molecular beam epitaxy

摘要

A combination of a lateralnhyphen;phyphen;njunction using an amphoteric doping of Si in GaAs and a semihyphen;insulating GaAs grown at low temperature is applied for the first time to a novel current confinement structure for an indexhyphen;guided InGaAs strained quantum well laser grown by twohyphen;step molecular beam epitaxy. A threshold current of 7.4 mA and total external differential quantum efficiency of 59percnt; under room temperature continuous wave operation are achieved with devices fabricated by a selfhyphen;aligned process.