The electrical property of InN grown by RF-MBE

摘要

We have studied initial growth process of InN to realize flat two-dimensional growth. InN films were grown by RF-MBE at 550℃ on InN buffer layer. We studied the relation between film structure and growth conditions. It was found that InN film grown with RF-plasma power of 240W showed excellent surface morphology. It was also found, at this growth condition, that the best electrical properties were obtained.