Theory indicates that the frequent observation of circuithyphen;controlled oscillations innhyphen;InP, rather than transithyphen;time oscillations, may be attributed to low cathode boundary fields and the shape of the velocityhyphen;electric field relation. For higher boundary fields, in the NDC region, computer calculations show recycling domains with some differences from GaAs. The incorporation of a large diffusion coefficient altered these results only in a minor way.
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