The effects of the writing voltage on the electrical bistability properties of organic memory devices consisting of a single layer

摘要

Electrical bistability properties of organic memory devices consisting of a single layer were theoretically investigated by using a drift-diffusion model combined with a field dependent mobility model and a single level trap model. After application of a writing voltage, the Current under a reading voltage was larger than that without a writing voltage. The behavior in the Current bistability was affected from the trapped electron density near the metal/organic interface. The increasing rate of the trapped electron density by increasing a writing voltage was relatively small, but it causes the abrupt increment to the current density, resulting in the bistable characteristics in the model device. (c) 2008 Elsevier Ltd. All rights reserved.