Luminescence quenching in erbiumhyphen;doped hydrogenated amorphous silicon

摘要

Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Roomhyphen;temperature photoluminescence at 1.54 mgr;m, due to an intrahyphen;4ftransition in Er4+, is observed after thermal annealing at 300ndash;400thinsp;deg;C. Excitation of Er3+is shown to be mediated by photocarriers. The Er3+luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at.thinsp;percnt;) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+is the dominant quenching mechanism as the temperature is increased. copy;1996 American Institute of Physics.