Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation

摘要

We investigate the carrier dynamics in self-assembled InAs/GaAs quantum dots under strictly resonant excitation of the ground state. The spectral selectivity of the resonant excitation allows us to study the physical properties of a class of dots characterized by an energy distribution comparable to the excitation laser spectrum. We detect no Stokes shift of the photoluminescence (PL) line. The PL decay time yields a straightforward determination of the radiative recombination time.