A new acceptor level in indiumhyphen;doped silicon

摘要

A new acceptor level located 0.111plusmn;0.002 eV from the valence band with a peak photoionization cross section of (1.4plusmn;0.6) times;10minus;16cm2has been observed in indiumhyphen;doped silicon. Its presence is revealed both by the lowhyphen;temperature slope of Hall measurements versus temperature and by the spectral response of the photoconductivity. The concentration of this 0.111hyphen;eV level is strongly correlated with the concentration of indium, suggesting that an In complex is responsible for this center.