Diffusivity of oxygen in silicon at the donor formation temperature

摘要

We present data on oxygen diffusivity in silicon for the temperature range 270ndash;400thinsp;deg;C. The diffusivity is determined from the recovery kinetics of a stress induced dichroism in the 9hyphen;mgr;m oxygen infrared absorption band. We combine our data for well dispersed oxygen (i.e., crystals heat treated at 1350thinsp;deg;C for 20 h), with Mikkelsenrsquo;s recent mass transport work at higher temperature to obtain the diffusivity,D=0.17 exp (minus;2.54/kT), for the range 330ndash;1240thinsp;deg;C. We have also found that the oxygen atomic hopping times can be as much as 100 times faster in crystals that have not received the 1350thinsp;deg;C heat treatment.