Uniform largehyphen;area highhyphen;gain silicon avalanche radiation detectors from transmutation doped silicon

摘要

Significant improvements in gain and energy resolution are reported for veryhyphen;largehyphen;areaphyphen;nhyphen;junctionhyphen;type silicon avalanche radiation detectors which were made from neutronhyphen;doped silicon. Detectors with frontal areas of about 20 mm2had gains which ranged from 400 (1.2 keV FWHM at 5.9 keV) to over 800 (2.2 keV FWHM at 5.9 keV). A 330hyphen;mm2device showed a maximum gain of 150 with an energy resolution of 16 keV FWHM at 22 keV.