pnjunctions in tungsten diselenide

摘要

pnjunctions in WSe2have been fabricated for the first time. 10ndash;20hyphen;mgr;mhyphen;thickphyphen;type layers were grown epitaxially onnhyphen;type substrates by vapor transport at 1060ndash;1070thinsp;deg;C in sealed ampoules. 5ndash;10hyphen;mm2diodes exhibit rectification ratios sim;104for 0.5hyphen;V bias. The diode space charge is sim;10 mgr;m wide, indicating a small gradient in the density of electrically active impurities. At room temperature the diode current is dominated by generation/recombination. The current is spacehyphen;charge limited at lower temperatures.