Surface barrier detectors were fabricated from vaporhyphen;grown semiinsulating CdTe. Photohyphen;peaks were well resolved at room temperature and at 90 percnt; charge collection efficiency for ggr; emitters ranging from57Co (122 keV) to60Co (1.17 and 1.33 MeV). Although a resolution of 16 percnt; (FWHM) could be attained with137Cs (662 keV), the 1.17hyphen; and 1.33hyphen;MeV peaks from60Co could not be separated.
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