Photovoltage scanning electron microscopy

摘要

A novel diagnostic technique utilizing secondaryhyphen;electron energy analysis in a scanning electron microscope to image modulated photovoltages in semiconductor samples is reported. Contacts to the sample are not required, allowing nondestructive inspection of partially processed devices and isolated regions. Photovoltage decay following pulsed illumination, indicative of material and junction quality, can be observed. Applications to silicon on sapphire, InP, and GaAs devices are described.