Thinhyphen;film Cu2S/CdS solar cells have been fabricated in a multisource chamber by using magnetron reactive sputtering to deposit the Cu2S and CdS layers. An analysis of junction current voltage, logthinsp;JscvsVoc(whereJscis the short circuit current andVocis the open circuit voltage) and capacitance versus voltage measurements indicates that the junctions have very good quality, with diode ideality factors of near unity, and interface recombination velocities of about 2times;105cm/s. Cells without antireflection coatings have yieldedJsc= 12.2 mA/cm2,Voc= 0.53 V, fill factors of 0.62, and efficiencies of sim;4percnt; in their ashyphen;deposited state. The cells show that Cu2S/CdS junctions equivalent to those formed by the topotaxial ion exchange method can be formed by sequential allhyphen;vacuum deposition of CdS and Cu2S, and that magnetron sputtering does not cause damage that compromises their electrical performance.
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