The performance of CuIn1-xGaxSe2-based photovoltaic cells prepared from low-cost precursor films

摘要

In this paper we report the 15.4- and 13.4-efficient CuIn1-xGaxSe2 (CIGS)-based devices from electrodeposited (ED) and electroless deposited (EL) precursors. The efficiency of the device prepared from electroless precursor film has been improved from 12.4 to 13.4. The dependence of quantum efficiencies on reverse-bias voltage has been measured for a 15.4-efficient ED device, 18.8-efficient physical-vapor-deposited device, and 14.2-efficient Cd-free device. The purpose of this work is to explore and improve the current collection mechanism. (C) 2000 Elsevier Science B.V. All rights reserved. References: 7