Minority carrier lifetime in InAs epilayers

摘要

The effective minority carrier lifetime in extrinsic sim;17hyphen;mgr;mhyphen;thicknhyphen;type InAs epilayers with 1.1times;1015sol;cm3donor impurities, grown by chemical vapor phase procedures on semihyphen;insulating GaAs, was determined to be tgr;e(77deg;K)equals;3.18 mgr;sec. It is assumed that the lifetime of carriers is limited by bulk Auger recombination and by surface recombination. The calculated surface lifetime, tgr;Sequals;3.19 mgr;sec, dominates the bulk Auger recombination lifetime, tgr;Aequals;7.67times;10minus;4sec in VPE layers. In liquid phase homoepitaxially grown InAs epilayers of comparable thickness with donor impuritiesNdequals;2.9times;1016sol;cm3the calculated 77deg;K effective lifetime is tgr;eequals;0.87 mgr;sec; it is the reciprocal of the sum of the reciprocals of tgr;Sand of the calculated tgr;A(77deg;K)equals;1.2 mgr;sec, in good agreement with the measured tgr;eequals;0.85 mgr;sec.