A novel infrared detector concept is proposed and experimentally demonstrated. Because of the flexibility provided by modern epitaxial growth techniques, we use thin heavily doped Si layers for infrared absorption via freehyphen;carrierhyphen;related processes, and the active region is sandwiched in aphyphen;njunction. Siliconhyphen;based materials for longhyphen;wavelength infrared applications are highly desirable because of the possibilities for advanced Si circuit technology.
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