Selfhyphen;interstitials and the 935 cmminus;1band in silicon

摘要

Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cmminus;1infrared absorption band under neutron irradiation while that for a 965 cmminus;1band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous assignment of the 935 cmminus;1band to a center with interstitial Si trapped by interstitial oxygen.