HEMT's capability for millimeter wave applications

摘要

This paper present a tutorial review on the High Electron MobilityTransistors(HENTS)for low-noise and Power applications at millimeterwave range frequen- Cies. The major parameters to achieve highperformance With such devices are discussed. Present status on powerAnd noise performances is given for InAlAs/InGaAs HEMTs on InP andGaAs substrates.