Preparation of CuInSe2 thin films by pulsed laser deposition the Cu-In alloy precursor and vacuum selenization

摘要

CuInSe2 (CIS) films were prepared by pulsed laser deposition (PLD) Cu-In alloy precursors on Mo-coated sodalitne glass substrates and vacuum selenization. Cu-In alloy precursors showed the dominant Cu11In9 phase and all the selenized CIS films showed the single chalcopyrite Structure with preferred (112) orientation by XRD method. The cross-sectional morphology was observed by SEM. The composition of the CIS films was also measured by XRF. The crystallized films showed Raman spectra with a dominant A(1) mode at 174 cm(-1), generally observed in I-III-VI2 chalcopyrite compounds and no additional peak at 258 cm(-1) which was observed in other reports. An energy band gap of about 0.95 eV and an absorption coefficient near 10(5) cm(-1) were obtained by absorption spectroscopy measurement. (c) 2008 Elsevier Ltd. All rights reserved.