phyphen;njunctions have been formed for the first time in AlAs by diffusing Zn into singlehyphen;crystalnhyphen;type vaporhyphen;grown AlAs layers.Indash;V, Cndash;V, and photovoltage measurements indicate wellhyphen;behaved junctions at room temperature with external electroluminescent efficiencies on the order of 10minus;5. The roomhyphen;temperature forwardhyphen;bias emission spectrum consists of a narrow yellowhyphen;green peak at 2.146 eV and two broad infrared peaks at 1.66 and 1.35 eV. At 600deg;K and 3 V reversehyphen;bias current densities of 10minus;3Asol;cm2are observed.
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