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Adsorption of SiH{sub}4 on Si(100)

机译:Adsorption of SiH{sub}4 on Si(100)

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摘要

We used infrared adsorption spectroscopy (IRAS) in multiple internal reflection geometry (MIR) to investigate the adsorption of silane (SiH{sub}4) on the Si(100)(2×1) surface. We demonstrate that at low hydrogen coverage, the silane molecule dissociatively adsorbs on Si(100)(2×1) to populate dihydride at the bridge site between two adjacent dimers and monohydride species. At high surface hydrogen coverage, silane adsorbs onto a single dimer to form dihydride and trihydride (SiH{sub}3). Thermal annealing following room-temperature adsorption of silane produces a hydrogen-terminated adatom dimer and an isolated monohydride species.
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