High efficiency submicron lighthyphen;emitting resonant tunneling diodes

摘要

We have fabricated GaAs/AlAsphyphen;ihyphen;ndoublehyphen;barrier resonant tunneling diodes with lateral dimensions down to 0.5 mgr;m. There are significant differences in the electroluminescence spectra of these diodes as compared with large area diodes fabricated from the same heterostructure. In particular, a red shift of the quantum well emission line is observed together with an additional spectral line which is attributed to spatially indirect recombination. Furthermore, there is a strong increase in the lowhyphen;temperature electroluminescence efficiency for the smallest devices. copy;1994 American Institute of Physics.